| PART |
Description |
Maker |
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM488M1644VBA-75F |
128Mb Mobile SDRAM
|
Electronic Theatre Controls, Inc.
|
| K4S513233F-MC K4S513233F K4S513233F-F1H K4S513233F |
Mobile SDRAM 移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4X1G163PC-FE K4X1G163PC-LE |
Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4M28163PH |
2M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4M51163PC-X |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4X1G323PC-FE K4X1G323PC-FG K4X1G323PC-LG |
32Mx32 Mobile DDR SDRAM
|
Samsung semiconductor
|
| HY5S5B2CLFP-6E HY5S5B2CLFP-HE HY5S5B2CLFP-SE |
256M (8Mx32bit) Mobile SDRAM
|
Hynix Semiconductor
|
| H55S1G32MFP-60 H55S1G32MFP-75 H55S1G32MFP-A3 H55S1 |
1Gb (32Mx32bit) Mobile SDRAM
|
Hynix Semiconductor
|
